| 000 | 00632nam a2200217Ia 4500 | ||
|---|---|---|---|
| 999 |
_c28219 _d28219 |
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| 005 | 20230124100257.0 | ||
| 008 | 180712s9999 xx 000 0 und d | ||
| 020 | _a047143079X | ||
| 041 | _aEN | ||
| 082 |
_a621.38152 _bNIC _223 |
||
| 100 | _aNicollian, E.H. | ||
| 100 | _a Brews, J.R. | ||
| 245 |
_aMos(Metal oxide semiconductor) _c/E.H.Nicollian, J.R.Brews _b: physics and technology |
||
| 260 |
_aNew Jersey _bJohn Wiley & Sons _c2003 |
||
| 300 | _axv, 906 p. - | ||
| 440 | _aWiley classics library | ||
| 500 | _a Includes appendixes, references and index. | ||
| 509 | _aNS | ||
| 650 | _aSemiconductors | ||
| 942 | _cR | ||